Heterostructures for High-Performance Devices
Citable URI:
http://hdl.handle.net/1721.1/57295
| Title: | Heterostructures for High-Performance Devices |
| Author: | Fonstad, Clifton J., Jr.; Braun, Eric K.; Shenoy, Krishna V.; Mikkelson, J. M.; Aggarwal, Rajni J.; Ahadian, Joseph F.; Petrich, Gale S.; Kolodziejski, Leslie A.; Grot, A. C.; Psaltis, Demetri; Royter, Yakov; Wang, Hao; Martin, Paul S.; Haus, Hermann A.; Chen, Jerry C.; Pan, Janet L.; Peng, Lung-Han; Iisuka, Norio; Smet, Jurgen H.; Hu, Qing; Prasad, Sheila; Hoshino, Isako |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1994-01-01 |
| Description: | Contain table of contents for Part I, table of contents for Section 1, an introduction, reports on seventeen research projects and a list of publications. |
| URI: | http://hdl.handle.net/1721.1/57295 |
| Other Identifiers: | RLE_PR_137_01_01s_01 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1994 Solid State Physics, Electronics and Optics Materials and Fabrication Heterostructures for High-Performance Devices |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137 |
| Keywords: | Heterostructures for High-Performance Devices, High-Temperature Stability of GaAs Integrated Circuits, High Peak-to-Valley Current Ratio Resonant-Tunneling Diodes on GaAs Substrates, Monolithic Integration of Resonant-Tunneling Diodes on GaAs Integrated Circuits, Phosphide-Based Optical Emitters for Monolithic Integration with GaAs MESFETS, Monolithic Integration of LEDs and VLSI GaAs MESFET Circuits, Development of an Epi-on-Electronics OEIC Technology, Integrated Optics Circuits Based on Commercial GaAs Integrated Circuits, Growth of Distributed Bragg Reflector at Reduced Temperature, Growth of Multiple Quantum Well Heterostructures at Reduced Temperature, Reactive Ion Etching of InGaAIAs Heterostructures, Reactive Ion Etching of InGaAsP Heterostructures, Tunable Semiconductor Lasers, Application of the Spectral Index Method to Laser Diode Design, Normal Incidence Quantum Well Infrared Photodetector, Fourteen-Band k * p Analysis of Intersubband Transitions in Conduction Band Quantum Wells, Intersubband Transitions in Ultra-Narrow Quantum Wells, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, High-Frequency/High-Speed Characterization of Optoelectronic Devices, High-Frequency/High-Speed Characterization of Integrated Circuits, In-Situ Supersonic Beam Etching of III-V Heterostructures |
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