Gas Source Molecular Beam Epitaxy of Compound Semiconductors

Home
→
Research Laboratory for Electronics (RLE)
→
RLE Progress Reports
→
RLE Progress Report, No. 137 (1994)
→
View Item

Gas Source Molecular Beam Epitaxy of Compound Semiconductors

Author: Kolodziejski, Leslie A.; Petrich, Gale S.; Fisher, Philip A.; Ho, Easen; House, Jody L.; Geraci, James R.; Lu, Kan; Haus, Hermann A.; Smith, Henry I.; Damask, Jay N.; Marley, Elisabeth A.; Fonstad, Clifton G., Jr.; Ahadian, Joseph F.; Shenoy, Krishna V.; Joannopoulos, John D.; Reif, L. Rafael; Lim, Kuo-Yi; Tang, Xiaofeng; Thompson, Carl V.; Donovan, Sean M.

Citable URI: http://hdl.handle.net/1721.1/57298

Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)

Date Issued: 1994-01-01

Description:

Contains an introduction and reports on seven research projects.

URI: http://hdl.handle.net/1721.1/57298

Other Identifiers: RLE_PR_137_01_01s_03

Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1994
Solid State Physics, Electronics and Optics
Materials and Fabrication
Gas Source Molecular Beam Epitaxy of Compound Semiconductors

Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137

Keywords: Gas Source Molecular Beam Epitaxy of Compound Semiconductors, Gas Source Molecular Beam Epitaxy of ZnSe, Gas Source Molecular Beam Epitaxy of ZnSe:CI, Gas Source Molecular Beam Epitaxy of ZnSe:N, Novel Epitaxial Ill-V Buffer Layers for Wide Bandgap II-VI Visible Sources, Heterovalent Interfaces Composed of II-VI/IIIl-V Semiconductors, (In,Ga)(As,P)/InP Semiconductor Waveguide Design for Synchronously Side-Coupled Bragg Resonators, Phosphide-Based Optical Emitters for Monolithic Integration with GaAs MESFETs, Photonic Bandgap Structures, Heteroepitaxy of GaAs onto Corrugated Surfaces of Si

Show full item metadata