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Title:
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Radiation effects in MIT Lincoln Lab 3DIC technology |
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Author:
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Gouker, P. M.; Wyatt, P. W.; Yost, D-R.; Chen, C. K.; Knecht, J. M.; Chen, C. L.; Keast, C. L. |
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Department:
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Lincoln Laboratory |
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Publisher:
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Institute of Electrical and Electronics Engineers |
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Issue Date:
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2009-11 |
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Abstract:
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We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other results indicate that MITLL 3DIC technology can be hardened to ionizing radiation by modifying the BOX. |
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URI:
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http://hdl.handle.net/1721.1/59350
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Other Identifiers:
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INSPEC Accession Number: 10964643 |
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ISBN:
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978-1-4244-4256-0 |
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ISSN:
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1078-621X |
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Citation:
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Gouker, P.M. et al. “Radiation effects in MIT Lincoln lab 3DIC technology.” SOI Conference, 2009 IEEE International. 2009. 1-2. ©2009 Institute of Electrical and Electronics Engineers. |
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Version:
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Final published version |
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Terms of Use:
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. |
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Published as:
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http://dx.doi.org/10.1109/SOI.2009.5318752
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Journal:
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2009 IEEE International SOI Conference |
