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Radiation effects in MIT Lincoln Lab 3DIC technology

dc.contributor.authorGouker, Pascale M.
dc.contributor.authorWyatt, Peter W.
dc.contributor.authorYost, Donna-Ruth W.
dc.contributor.authorChen, Chenson K.
dc.contributor.authorChen, Chang-Lee
dc.contributor.authorKnecht, Jeffrey M.
dc.contributor.authorKeast, Craig L.
dc.date.accessioned2010-10-14T20:49:35Z
dc.date.available2010-10-14T20:49:35Z
dc.date.issued2009-11
dc.date.submitted2009-10
dc.identifier.isbn978-1-4244-4256-0
dc.identifier.issn1078-621X
dc.identifier.otherINSPEC Accession Number: 10964643
dc.identifier.urihttp://hdl.handle.net/1721.1/59350
dc.description.abstractWe characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other results indicate that MITLL 3DIC technology can be hardened to ionizing radiation by modifying the BOX.en_US
dc.description.sponsorshipUnited States. Defense Threat Reduction Agency (Air Force Contract FA8721-05-C-0002)en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agencyen_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/SOI.2009.5318752en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleRadiation effects in MIT Lincoln Lab 3DIC technologyen_US
dc.typeArticleen_US
dc.identifier.citationGouker, P.M. et al. “Radiation effects in MIT Lincoln lab 3DIC technology.” SOI Conference, 2009 IEEE International. 2009. 1-2. ©2009 Institute of Electrical and Electronics Engineers.en_US
dc.contributor.departmentLincoln Laboratoryen_US
dc.contributor.approverGouker, Pascale M.
dc.contributor.mitauthorGouker, Pascale M.
dc.contributor.mitauthorWyatt, Peter W.
dc.contributor.mitauthorYost, Donna-Ruth W.
dc.contributor.mitauthorChen, Chenson K.
dc.contributor.mitauthorChen, Chang-Lee
dc.contributor.mitauthorKnecht, Jeffrey M.
dc.contributor.mitauthorKeast, Craig L.
dc.relation.journal2009 IEEE International SOI Conferenceen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsGouker, P. M.; Wyatt, P. W.; Yost, D-R.; Chen, C. K.; Knecht, J. M.; Chen, C. L.; Keast, C. L.en
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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