Fabrication and Characterization of Through-Substrate Interconnects

Fabrication and Characterization of Through-Substrate Interconnects

Author: Wu, Joy; del Alamo, Jesús A.

Citable URI: http://hdl.handle.net/1721.1/59587

Department: Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science

Publisher: Institute of Electrical and Electronics Engineers

Date Issued: 2010-05

Abstract:

We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for aspect ratios > 4, and sidewall capacitance that approaches the theoretical value. For an aspect ratio of 10 (10 in diameter and 100 high), the through-substrate via has an average inductance of 36 pH at 10 GHz, resistance of 0.6 at 1 GHz, and sidewall capacitance of 0.3 pF.

URI: http://hdl.handle.net/1721.1/59587

Other Identifiers: INSPEC Accession Number: 11340896

ISSN: 0018-9383

Citation: Wu, J.H., and J.A. del Alamo. “Fabrication and Characterization of Through-Substrate Interconnects.” Electron Devices, IEEE Transactions on 57.6 (2010): 1261-1268. © 2010 Institute of Electrical and Electronics Engineers.

Version: Final published version

Terms of Use: Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.

Published As: http://dx.doi.org/10.1109/ted.2010.2045671

Journal: IEEE Transactions on Electron Devices

Keywords: Ground inductance, Si RF technology, substrate crosstalk, substrate via, through-substrate via, through-wafer interconnect, through-wafer via, via inductance

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