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1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

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1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

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Alternative Title: 1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge
Author: Ng, Tien Khee; Yoon, Soon Fatt; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Lew, Kim Luong; Chen, Kah Pin; Fitzgerald, Eugene A.; Pitera, Arthur J.; Ringel, Steve A.; Carlin, Andrew M.; Gonzalez, Maria
Department: Massachusetts Institute of Technology. Dept. of Materials Science and Engineering; Singapore-MIT Alliance
Publisher: Institute of Electrical and Electronics Engineers
Date Issued: 2010-02
Abstract:
The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth.
URI: http://hdl.handle.net/1721.1/60058
Other Identifiers: INSPEC Accession Number: 11152112
ISBN: 978-1-4244-2949-3
ISSN: 0160-8371
Citation: Ng, T.K. et al. “1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge.” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. 2009. 000076-000080. © 2010 IEEE.
Version: Final published version
Terms of Use: Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Published As: http://dx.doi.org/10.1109/PVSC.2009.5411736
Journal: 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009

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