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1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

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dc.contributor.author Yoon, Soon Fatt
dc.contributor.author Chen, Kah Pin
dc.contributor.author Ng, Tien Khee
dc.contributor.author Tan, Kian Hua
dc.contributor.author Loke, Wan Khai
dc.contributor.author Wicaksono, Satrio
dc.contributor.author Lew, Kim Luong
dc.contributor.author Pitera, Arthur J.
dc.contributor.author Fitzgerald, Eugene A.
dc.contributor.author Ringel, Steve A.
dc.contributor.author Carlin, Andrew M.
dc.contributor.author Gonzalez, Maria
dc.date.accessioned 2010-12-02T17:53:33Z
dc.date.available 2010-12-02T17:53:33Z
dc.date.issued 2010-02
dc.date.submitted 2009-06
dc.identifier.isbn 978-1-4244-2949-3
dc.identifier.issn 0160-8371
dc.identifier.other INSPEC Accession Number: 11152112
dc.identifier.uri http://hdl.handle.net/1721.1/60058
dc.description.abstract The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth. en_US
dc.description.sponsorship Singapore. National Research Foundation en_US
dc.description.sponsorship Singapore. Economic Development Board (project ID NRF2007EWT-CERP01-0206) en_US
dc.language.iso en_US
dc.publisher Institute of Electrical and Electronics Engineers en_US
dc.relation.isversionof http://dx.doi.org/10.1109/PVSC.2009.5411736 en_US
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. en_US
dc.source IEEE en_US
dc.title 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge en_US
dc.title.alternative 1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge en_US
dc.type Article en_US
dc.identifier.citation Ng, T.K. et al. “1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge.” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. 2009. 000076-000080. © 2010 IEEE. en_US
dc.contributor.department Massachusetts Institute of Technology. Department of Materials Science and Engineering en_US
dc.contributor.department Singapore-MIT Alliance en_US
dc.contributor.approver Fitzgerald, Eugene A.
dc.contributor.mitauthor Yoon, Soon Fatt
dc.contributor.mitauthor Chen, Kah Pin
dc.contributor.mitauthor Pitera, Arthur J.
dc.contributor.mitauthor Fitzgerald, Eugene A.
dc.relation.journal 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009 en_US
dc.identifier.mitlicense PUBLISHER_POLICY en_US
dc.eprint.version Final published version en_US
dc.type.uri http://purl.org/eprint/type/ConferencePaper en_US
dspace.orderedauthors Ng, Tien Khee; Yoon, Soon Fatt; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Lew, Kim Luong; Chen, Kah Pin; Fitzgerald, Eugene A.; Pitera, Arthur J.; Ringel, Steve A.; Carlin, Andrew M.; Gonzalez, Maria en


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