1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

dc.contributor.author	Yoon, Soon Fatt
dc.contributor.author	Chen, Kah Pin
dc.contributor.author	Ng, Tien Khee
dc.contributor.author	Tan, Kian Hua
dc.contributor.author	Loke, Wan Khai
dc.contributor.author	Wicaksono, Satrio
dc.contributor.author	Lew, Kim Luong
dc.contributor.author	Pitera, Arthur J.
dc.contributor.author	Fitzgerald, Eugene A.
dc.contributor.author	Ringel, Steve A.
dc.contributor.author	Carlin, Andrew M.
dc.contributor.author	Gonzalez, Maria
dc.date.accessioned	2010-12-02T17:53:33Z
dc.date.available	2010-12-02T17:53:33Z
dc.date.issued	2010-02
dc.date.submitted	2009-06
dc.identifier.isbn	978-1-4244-2949-3
dc.identifier.issn	0160-8371
dc.identifier.other	INSPEC Accession Number: 11152112
dc.identifier.uri	http://hdl.handle.net/1721.1/60058
dc.description.abstract	The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth.	en_US
dc.description.sponsorship	Singapore. National Research Foundation	en_US
dc.description.sponsorship	Singapore. Economic Development Board (project ID NRF2007EWT-CERP01-0206)	en_US
dc.language.iso	en_US
dc.publisher	Institute of Electrical and Electronics Engineers	en_US
dc.relation.isversionof	http://dx.doi.org/10.1109/PVSC.2009.5411736	en_US
dc.rights	Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.	en_US
dc.source	IEEE	en_US
dc.title	1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge	en_US
dc.title.alternative	1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge	en_US
dc.type	Article	en_US
dc.identifier.citation	Ng, T.K. et al. “1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge.” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. 2009. 000076-000080. © 2010 IEEE.	en_US
dc.contributor.department	Massachusetts Institute of Technology. Dept. of Materials Science and Engineering	en_US
dc.contributor.department	Singapore-MIT Alliance	en_US
dc.contributor.approver	Fitzgerald, Eugene A.
dc.contributor.mitauthor	Yoon, Soon Fatt
dc.contributor.mitauthor	Chen, Kah Pin
dc.contributor.mitauthor	Pitera, Arthur J.
dc.contributor.mitauthor	Fitzgerald, Eugene A.
dc.relation.journal	34th IEEE Photovoltaic Specialists Conference (PVSC), 2009	en_US
dc.identifier.mitlicense	PUBLISHER_POLICY	en_US
dc.eprint.version	Final published version	en_US
dc.type.uri	http://purl.org/eprint/type/ConferencePaper	en_US
dspace.orderedauthors	Ng, Tien Khee; Yoon, Soon Fatt; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Lew, Kim Luong; Chen, Kah Pin; Fitzgerald, Eugene A.; Pitera, Arthur J.; Ringel, Steve A.; Carlin, Andrew M.; Gonzalez, Maria	en