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Band-to-band tunneling in silicon diodes and tunnel transistors

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dc.contributor.advisor Judy L. Hoyt and Dimitri A. Antoniadis. en_US
dc.contributor.author Teherani, James Towfik en_US
dc.contributor.other Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. en_US
dc.date.accessioned 2010-12-06T18:50:30Z
dc.date.available 2010-12-06T18:50:30Z
dc.date.copyright 2010 en_US
dc.date.issued 2010 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/60215
dc.description Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010. en_US
dc.description This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. en_US
dc.description Cataloged from student submitted PDF version of thesis. en_US
dc.description Includes bibliographical references (p. 82-83). en_US
dc.description.abstract This work studies the effect of mechanically applied uniaxial strain on reverse-bias band-to-band tunneling current in n+/p+ vertical silicon diodes fabricated on {100} and {110} substrate orientations. The Band Structure Lab and nextnano are used to analyze the change in band structure with uniaxial stress applied perpendicular to the tunneling direction along <100> and <110> crystal directions. A theoretical analysis based on the Wentzel-Kramers-Brillouin (WKB) approximation for tunneling probability combined with an uncoupled full-band Poisson equation solver and the calculated band structure changes is developed to model the experimental results. Reasonable agreement between experimental data and theoretical calculations is found when comparing the relative change in tunneling current at 1 V reverse-bias versus strain for different substrate orientation/strain configurations. en_US
dc.description.statementofresponsibility by James Towfik Teherani. en_US
dc.format.extent 83 p. en_US
dc.language.iso eng en_US
dc.publisher Massachusetts Institute of Technology en_US
dc.rights M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. en_US
dc.rights.uri http://dspace.mit.edu/handle/1721.1/7582 en_US
dc.subject Electrical Engineering and Computer Science. en_US
dc.title Band-to-band tunneling in silicon diodes and tunnel transistors en_US
dc.type Thesis en_US
dc.description.degree S.M. en_US
dc.contributor.department Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. en_US
dc.identifier.oclc 679684306 en_US


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