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A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS

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A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS

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Author: Ramadass, Yogesh; Fayed, Ayman; Haroun, Baher; Chandrakasan, Anantha
Department: Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Publisher: Institute of Electrical and Electronic Engineers
Date Issued: 2010-02
Abstract:
A completely on-chip switched-capacitor DC-DC converter that occupies 0.16 mm2 [mm superscript 2] is implemented in a 45 nm CMOS process. The converter delivers 8 mA output current while maintaining load voltages from 0.8 to 1 V from a 1.8 V input supply. A digital capacitive modulation scheme is employed to maintain the converter efficiency between 50 to 70% over a wide range of load current levels.
URI: http://hdl.handle.net/1721.1/61742
Other Identifiers: INSPEC Accession Number: 11204884
ISBN: 978-1-4244-6033-5
ISSN: 0193-6530
Citation: Ramadass, Y. et al. “A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS.” Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International. 2010. 208-209. © 2010, IEEE
Version: Final published version
Terms of Use: Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Published As: http://dx.doi.org/10.1109/ISSCC.2010.5433984
Journal: IEEE International Solid-State Circuits Conference.. Digest of technical papers

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