Growth and characterization of mid-infrared phosphide-based semiconductor diode lasers

Abstract

A diode laser emitting at mid-infrared wavelength (2~5 pm) is an ideal light source for petrochemical or industrial-important gas sensing. Antimony-based III-V compound semiconductor material is the most prominent pseudomorphic epitaxy candidate for this application. However, phosphide-based material not only has the potential to reach this wavelength utilizing a strained active region but also takes the advantage of sophisticated material study from telecommunication technology. This thesis presents the realization of a 1.97 pm emission ridge waveguide laser in design, fabrication, and characterization phases. Ino.85 Gao.15As/Alo.1Ino.4 8Gao.42As strained multiple quantum wells structures have being built on InP substrates. Structural, optical, and electrical properties of the material have being tested and summarized.