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Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption

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Title: Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption
Author: Bravo-Abad, J.; Ippen, E. P.; Soljačić, M.
Department: Massachusetts Institute of Technology. Research Laboratory of Electronics; Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Dept. of Physics
Publisher: American Institute of Physics (AIP)
Issue Date: 2009-06
Abstract: In this letter we theoretically demonstrate that by dramatically enhancing two-photon absorption, all-silicon optical microresonators can act as efficient photodetectors for light at telecom wavelengths. We illustrate this approach with two specific designs based on a ring resonator and a photonic crystal cavity. The proposed scheme is fully compatible with standard silicon complementary metal-oxide-semiconductor processing technology, and thus, could contribute to the development of chip-scale integrated photodetectors based exclusively on silicon.
URI: http://hdl.handle.net/1721.1/71940
ISSN: 0003-6951
1077-3118
Citation: Bravo-Abad, J., E. P. Ippen, and M. Soljačić. “Ultrafast Photodetection in an All-silicon Chip Enabled by Two-photon Absorption.” Applied Physics Letters 94.24 (2009): 241103. © 2009 American Institute of Physics
Version: Final published version
Terms of Use: Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Published as: http://dx.doi.org/10.1063/1.3155135
Journal: Applied Physics Letters

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