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Title:
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Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption |
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Author:
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Bravo-Abad, J.; Ippen, E. P.; Soljačić, M. |
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Department:
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Massachusetts Institute of Technology. Research Laboratory of Electronics; Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Dept. of Physics |
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Publisher:
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American Institute of Physics (AIP) |
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Issue Date:
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2009-06 |
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Abstract:
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In this letter we theoretically demonstrate that by dramatically enhancing two-photon absorption, all-silicon optical microresonators can act as efficient photodetectors for light at telecom wavelengths. We illustrate this approach with two specific designs based on a ring resonator and a photonic crystal cavity. The proposed scheme is fully compatible with standard silicon complementary metal-oxide-semiconductor processing technology, and thus, could contribute to the development of chip-scale integrated photodetectors based exclusively on silicon. |
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URI:
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http://hdl.handle.net/1721.1/71940
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ISSN:
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0003-6951 1077-3118 |
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Citation:
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Bravo-Abad, J., E. P. Ippen, and M. Soljačić. “Ultrafast Photodetection in an All-silicon Chip Enabled by Two-photon Absorption.” Applied Physics Letters 94.24 (2009): 241103. © 2009 American Institute of Physics |
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Version:
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Final published version |
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Terms of Use:
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. |
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Published as:
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http://dx.doi.org/10.1063/1.3155135
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Journal:
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Applied Physics Letters |