Gigahertz Ambipolar Frequency Multiplier Based on Cvd Graphene

Gigahertz Ambipolar Frequency Multiplier Based on Cvd Graphene

Author: Wang, Han; Hsu, Allen; Ki Kang Kim, Allen; Jing Kong, Allen; Palacios, Tomas

Citable URI: http://hdl.handle.net/1721.1/72955

Department: Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Date Issued: 2010-12

Abstract:

Ambipolar transport in graphene offers great opportunities for novel device and circuit applications. This paper discusses the RF performance of CVD grown graphene transistors for the first time. Then, a new graphene ambipolar frequency multiplier that can operate at 1.4 GHz with extremely high output spectral purity (>; 90%) is demonstrated. These GHz graphene frequency multipliers, made from wafer-scale graphene synthesis and fabrication processes, demonstrate the great potential of graphene-based ambipolar devices for RF and mixed-signal applications.

URI: http://hdl.handle.net/1721.1/72955

ISBN: 978-1-4244-7419-6
978-1-4424-7418-5

ISSN: 0163-1918

Citation: Wang, Han et al. “Gigahertz Ambipolar Frequency Multiplier Based on CVD Graphene.” Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010. 23.6.1–23.6.4. © Copyright 2010 IEEE

Version: Final published version

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Published As: http://dx.doi.org/10.1109/IEDM.2010.5703423

Journal: Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010

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