Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
Author(s)
Berggren, Karl K.; Yang, Joel K. W.; Cord, Bryan M.; Duan, Huigao; Klingfus, Joseph; Nam, Sung-Wook; Kim, Ki-Bum; Rooks, Michael J.; ... Show more Show less
DownloadBerggren-Understanding of hydrogen.pdf (606.4Kb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than developer contrast. Finally, they showed that with a high-development-rate process, a short duration development of 15 s was sufficient to resolve high-resolution structures in 15-nm-thick resist, while a longer development degraded the quality of the structures with no improvement in the resolution.
Date issued
2009-12Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
Publisher
American Vacuum Society (AVS)
Citation
Yang, Joel K. W. et al. “Understanding of Hydrogen Silsesquioxane Electron Resist for Sub-5-nm-half-pitch Lithography.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27.6 (2009): 2622. © 2009 American Vacuum Society
Version: Final published version
ISSN
1071-1023
1520-8567