An unreleased mm-wave resonant body transistor

An unreleased mm-wave resonant body transistor

Author: Wang, Wentao; Popa, Laura C.; Marathe, Radhika; Weinstein, Dana

Citable URI: http://hdl.handle.net/1721.1/73576

Department: Massachusetts Institute of Technology. Dept. of Mechanical Engineering; Massachusetts Institute of Technology. Dept. of Physics; Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Date Issued: 2011-03

Abstract:

In this work, we present the first fully unreleased Micro-Electro-Mechanical (MEM) resonator. The 1st harmonic longitudinal resonance of a silicon FinFET fully clad in SiO[subscript 2] is demonstrated. The device exhibits two resonances at 39 and 41 GHz, corresponding well with simulation results. The quality factor (Q) of 129 at 39 GHz is ~4× lower than that of its released counterpart. Methods to improve Q and reduce spurious modes are introduced. This first demonstration of unreleased resonators in a hybrid MEMS-CMOS technology can provide RF and microwave CMOS circuit designers with active high-Q devices monolithically integrated in Front-End-of-Line (FEOL) processing without the need for post-processing or special packaging.

URI: http://hdl.handle.net/1721.1/73576

ISBN: 978-1-4244-9634-1
978-1-4244-9632-7

ISSN: 1084-6999

Citation: Wang, Wentao et al. “An Unreleased Mm-wave Resonant Body Transistor.” IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS), 2011. 1341–1344.

Version: Author's final manuscript

Detailed Terms: http://creativecommons.org/licenses/by-nc-sa/3.0/

Published As: http://dx.doi.org/10.1109/MEMSYS.2011.5734682

Journal: Proceedings of the IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS), 2011

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