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High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

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dc.contributor.author Vajpeyi, Agam P.
dc.contributor.author Chua, Soo-Jin
dc.contributor.author Tripathy, S.
dc.contributor.author Fitzgerald, Eugene A.
dc.date.accessioned 2004-12-10T14:02:52Z
dc.date.available 2004-12-10T14:02:52Z
dc.date.issued 2005-01
dc.identifier.uri http://hdl.handle.net/1721.1/7368
dc.description.abstract Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN. en
dc.description.sponsorship Singapore-MIT Alliance (SMA) en
dc.format.extent 2415487 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.relation.ispartofseries Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject gallium nitride en
dc.subject porous semiconductors en
dc.subject ultraviolet assisted electrochemical etching en
dc.subject nanoporous GaN film en
dc.title High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching en
dc.type Article en


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