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Oblique Angle Deposition of Germanium Film on Silicon Substrate

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dc.contributor.author Chew, Han Guan
dc.contributor.author Choi, Wee Kiong
dc.contributor.author Chim, Wai Kin
dc.contributor.author Fitzgerald, Eugene A.
dc.date.accessioned 2004-12-10T14:08:26Z
dc.date.available 2004-12-10T14:08:26Z
dc.date.issued 2005-01
dc.identifier.uri http://hdl.handle.net/1721.1/7370
dc.description.abstract The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy. en
dc.description.sponsorship Singapore-MIT Alliance (SMA) en
dc.format.extent 1682300 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.relation.ispartofseries Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject Oblique angle deposition en
dc.subject Germanium nanowires en
dc.title Oblique Angle Deposition of Germanium Film on Silicon Substrate en
dc.type Article en


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