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Femtosecond laser processing of crystalline silicon

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dc.contributor.author Tran, D. V.
dc.contributor.author Lam, Yee Cheong
dc.contributor.author Zheng, H. Y.
dc.contributor.author Murukeshan, V. M.
dc.contributor.author Chai, J.C.
dc.contributor.author Hardt, David E.
dc.date.accessioned 2004-12-14T19:31:42Z
dc.date.available 2004-12-14T19:31:42Z
dc.date.issued 2005-01
dc.identifier.uri http://hdl.handle.net/1721.1/7449
dc.description.abstract This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) with different number of pulses were studied. New morphological features such as pits, cracks formation, Laser-Induced Periodic Surface Structures (LIPSS) and ablation were observed. The investigation indicated that there are two distinct mechanisms under femtosecond laser irradiation: low fluence regime with different morphological features and high fluence regime with high material removal and without complex morphological features. en
dc.description.sponsorship Singapore-MIT Alliance (SMA) en
dc.format.extent 967927 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.relation.ispartofseries Innovation in Manufacturing Systems and Technology (IMST);
dc.subject crystalline silicon en
dc.subject femtosecond laser en
dc.subject morphology en
dc.subject ablation en
dc.subject incubation effect en
dc.title Femtosecond laser processing of crystalline silicon en
dc.type Article en


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