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Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling

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dc.contributor.author Fu, Yongqi
dc.contributor.author Ngoi, Kok Ann Bryan
dc.date.accessioned 2004-12-14T19:33:15Z
dc.date.available 2004-12-14T19:33:15Z
dc.date.issued 2005-01
dc.identifier.uri http://hdl.handle.net/1721.1/7450
dc.description.abstract Holes with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size below 100 nm. A phenomenon of volume swell at the boundary of the hole was observed. The reason maybe due to the dose dependence of the effective sputter yield in low intensity Gaussian beam tail regions and redeposition. Different materials were used to investigate variation of the aspect ratio. The results show that for some special material, such as Ni-Be, the corresponding aspect ratio can reach 13.8:1 with Cl₂ assistant etching, but only 0.09:1 for Si(100) with single scan of the FIB. en
dc.description.sponsorship Singapore-MIT Alliance (SMA) en
dc.format.extent 509804 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.relation.ispartofseries Innovation in Manufacturing Systems and Technology (IMST);
dc.subject AFM en
dc.subject micro-hole en
dc.subject FIB en
dc.subject CI2 en
dc.title Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling en
dc.type Article en


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