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dc.contributor.authorDai, Weitao
dc.contributor.authorYap, Daniel
dc.contributor.authorChen, Gang
dc.date.accessioned2013-04-04T15:36:37Z
dc.date.available2013-04-04T15:36:37Z
dc.date.issued2012-06
dc.date.submitted2012-05
dc.identifier.issn1094-4087
dc.identifier.urihttp://hdl.handle.net/1721.1/78279
dc.description.abstractEfficient trapping of the light in a photon absorber or a photodetector can improve its performance and reduce its cost. In this paper we investigate two designs for light-trapping in application to infrared absorption. Our numerical simulations demonstrate that nonabsorptive pyramids either located on top of an absorbing film or having embedded absorbing rods can efficiently enhance the absorption in the absorbing material. A spectrally averaged absorptance of 83% is achieved compared to an average absorptance of 28% for the optimized multilayer structure that has the same amount of absorbing material. This enhancement is explained by the coupled-mode theory. Similar designs can also be applied to solar cells.en_US
dc.language.isoen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.20.00A519en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleWideband enhancement of infrared absorption in a direct band-gap semiconductor by using nonabsorptive pyramidsen_US
dc.typeArticleen_US
dc.identifier.citationDai, Weitao, Daniel Yap, and Gang Chen. “Wideband Enhancement of Infrared Absorption in a Direct Band-gap Semiconductor by Using Nonabsorptive Pyramids.” Optics Express 20.S4 (2012): A519. © 2012 OSAen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.mitauthorDai, Weitao
dc.contributor.mitauthorChen, Gang
dc.relation.journalOptics Expressen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsDai, Weitao; Yap, Daniel; Chen, Gangen
dc.identifier.orcidhttps://orcid.org/0000-0002-3968-8530
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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