Indium arsenide quantum dots for single photons in the communications band
Name
871004207-MIT.pdf
Description
Full printable version
Size
2.67 MB
Format
Adobe PDF
Checksum (MD5)
25b9dcd847b64452642a08b9265cb08d
Author(s)
Steinbrecher, Gregory R
Advisor(s)
Eric A. Dauler and Jeffrey H. Shapiro.
Date Issued
2013
Publisher
Massachusetts Institute of Technology
Abstract
This thesis presents work towards engineering and characterizing epitaxial Indium Arsenide (InAs) quantum dots as single photon sources in the optical communications C-Band (Conventional Band; 1535 nm-1565 nm wavelength). First, the underlying theory of semiconductor quantum dots and the necessary tools from quantum optics are reviewed. Next, a detailed description is given of the experimental system design, along with an overview of the design and implementation process of a cryogenic scanning laser confocal microscope. Then, the quantum dot growth process is presented along with the results of measurements on early quantum dot samples, which suggested that the initial growth process needed to be refined. We present efforts towards improving the growth process and measurements of quantum dot samples resulting from this new process.
Description
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2013.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 75-78).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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