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Ge photodetectors for Si microphotonics

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dc.contributor.advisor Lionel Cooper Kimerling. en_US Luan Hsin-Chiao, 1969- en_US
dc.contributor.other Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. en_US 2005-08-23T15:17:16Z 2005-08-23T15:17:16Z 2001 en_US 2001 en_US
dc.description Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001. en_US
dc.description Includes bibliographical references (p. 143-157). en_US
dc.description.abstract This thesis demonstrates the integration of pure Ge near-infrared photodetectors on Si. Ge epilayers were grown directly on Si by a two-step ultra-high-vacuum/chemical-vapor-deposition (UHV/CVD) process. This work conclusively proves that threading-dislocation densities in the Ge epilayers, measured both by plan-view transmission electron microscopy and etch-pit-density (EPD) counting, were reduced by cyclic thermal annealing. Additionally, Ge mesas with no threading dislocations as measured by EPD were also demonstrated. The removal of threading-dislocations can be attributed to the thermal stress induced dislocation glide and reactions. Using the annealed Ge epilayers grown on Si, p-i-n Ge photodetectors with maximum responsivities of 770 mA/W at 1.3 μm were fabricated. Finally, to allow the integration of Ge epilayers in Si microelectronic processing, the protection and passivation of Ge was investigated. The passivation was provided by the oxidation of Si epilayers grown on Ge. Capacitance-voltage characteristics of metal-oxide-semiconductor devices demonstrated the high quality of the passivation with the measured interface state density of 4 x 1011 cm-2eV- 1. en_US
dc.description.statementofresponsibility by Hsin-Chiao Luan. en_US
dc.format.extent 157 p. en_US
dc.format.extent 14362909 bytes
dc.format.extent 14362668 bytes
dc.format.mimetype application/pdf
dc.format.mimetype application/pdf
dc.language.iso eng en_US
dc.publisher Massachusetts Institute of Technology en_US
dc.rights M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. en_US
dc.subject Materials Science and Engineering. en_US
dc.title Ge photodetectors for Si microphotonics en_US
dc.type Thesis en_US Ph.D. en_US
dc.contributor.department Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. en_US
dc.identifier.oclc 48171997 en_US

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