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Nanostructuring magnetic thin films using interference lithography

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dc.contributor.advisor Henry I. Smith. en_US
dc.contributor.author Walsh, Michael E. (Michael Edward), 1975- en_US
dc.contributor.other Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. en_US
dc.date.accessioned 2005-08-23T15:32:04Z
dc.date.available 2005-08-23T15:32:04Z
dc.date.copyright 2000 en_US
dc.date.issued 2000 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/8812
dc.description Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000. en_US
dc.description Includes bibliographical references. en_US
dc.description.abstract Proliferation of data caused by rapid increases in computer power and the rise of the internet have caused an acute need for advanced data storage technology. Patterned magnetic media and magneto-resistive random-access memory (MRAM) can potentially fulfill this need. The technique of interference lithography is examined in the context of patterning ~100 nm size features. An interferometer is designed and built which will allow exposure of gratings and grids with a minimum spatial period of ~ 170 nm. Etching methods, especially ion-beam etching, or ion milling, is investigated as the optimal choice for patterning sub-100 nm features in thin magnetic films and multi-layer thin film stacks. The advantages and disadvantages of a variety of resist stacks and etch masks are presented. An optimal process for linewidth control and preservation of magnetic properties is found to include a thin phase-shifting resist stack and a tungsten hardmask. en_US
dc.description.statementofresponsibility by Michael E. Walsh. en_US
dc.format.extent 85 leaves en_US
dc.format.extent 8799753 bytes
dc.format.extent 8799513 bytes
dc.format.mimetype application/pdf
dc.format.mimetype application/pdf
dc.language.iso eng en_US
dc.publisher Massachusetts Institute of Technology en_US
dc.rights M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. en_US
dc.rights.uri http://dspace.mit.edu/handle/1721.1/7582
dc.subject Electrical Engineering and Computer Science. en_US
dc.title Nanostructuring magnetic thin films using interference lithography en_US
dc.type Thesis en_US
dc.description.degree S.M. en_US
dc.contributor.department Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. en_US
dc.identifier.oclc 48253228 en_US


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