Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator–Magnetic-Topological-Insulator Interface
Name
PhysRevLett.115.087201.pdf
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1.71 MB
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Checksum (MD5)
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Author(s)
Li, Mingda
Kirby, Brian. J.
Jamer, Michelle E.
Cui, Wenping
Wu, Lijun
Wei, Peng
Zhu, Yimei
Heiman, Don
Li, Ju
Chang, Cui-zu
Date Issued
August 2015
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Li, Mingda, Cui-Zu Chang, Brian J. Kirby, Michelle E. Jamer, Wenping Cui, Lijun Wu, Peng Wei, Yimei Zhu, Don Heiman, Ju Li, and Jagadeesh S. Moodera. "Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator–Magnetic-Topological-Insulator Interface." Phys. Rev. Lett. 115, 087201 (August 2015). © 2015 American Physical Society
Version
Final published version
Abstract
Magnetic exchange driven proximity effect at a magnetic-insulator–topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb[subscript 2-x]V[subscript x]Te[subscript 3] hybrid heterostructure, where V doping is used to drive the TI (Sb[subscript 2]Te[subscript 3]) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Plasma Science and Fusion Center
MIT Energy Initiative
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
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DOI of Published Version
https://doi.org/10.1103/PhysRevLett.115.087201
