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    • On Backscattering and Mobility in Nanoscale Silicon MOSFETs 

      Jeong, Changwook; Antoniadis, Dimitri A.; Lundstrom, Mark S. (Institute of Electrical and Electronics Engineers, 2009-10)
      The DC current-voltage characteristics of an n-channel silicon MOSFET with an effective gate length of about 60 nm are analyzed and interpreted in terms of scattering theory. The experimental results are found to be ...