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    • N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology 

      Chung, Jinwook; Piner, Edwin L.; Palacios, Tomas (Institute of Electrical and Electronics Engineers, 2009-01)
      We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...