Now showing items 1-5 of 5

    • Effect of Wafer Bow and Etch Patterns in Direct Wafer Bonding 

      Spearing, S. Mark; Turner, K.T. (2003-01)
      Direct wafer bonding has been identified as an en-abling technology for microelectromechanical systems (MEMS). As the complexity of devices increase and the bonding of multiple patterned wafers is required, there is a need ...
    • Gold Thermocompression Wafer Bonding 

      Spearing, S. Mark; Tsau, Christine H.; Schmidt, Martin A. (2004-01)
      Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, ...
    • Novel CMOS-Compatible Optical Platform 

      Pitera, Arthur J.; Groenert, M. E.; Yang, V. K.; Lee, Minjoo L.; Leitz, Christopher W.; e.a. (2003-01)
      A research synopsis is presented summarizing work with integration of Ge and III-V semiconductors and optical devices with Si. III-V GaAs/AlGaAs quantum well lasers and GaAs/AlGaAs optical circuit structures have been ...
    • Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer 

      Isaacson, David M.; Taraschi, G.; Pitera, Arthur J.; Ariel, Nava; Fitzgerald, Eugene A.; e.a. (2005-01)
      We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...
    • Wafer-Level Thermocompression Bonds 

      Tsau, Christine H.; Schmidt, Martin A.; Spearing, S. Mark (2003-01)
      Thermocompression bonding of gold is a promising technique for achieving low temperature, wafer-level bonding without the application of an electric field or complicated pre-bond cleaning procedure. The presence of a ductile ...