Operation and Optimization of Silicon-Diode-Based Optical Modulators
Name
Spector-2010-Operation and Optimization of Silicon-Diode-Based Optical Modulators.pdf
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Author(s)
Spector, Steven Jay
Sorace, Cheryl M.
Geis, Michael W.
Grein, Matthew E.
Yoon, Jung Uk
Lyszczarz, Theodore M.
Ippen, Erich P.
Kaertner, Franz X.
Date Issued
February 2010
Journal
IEEE journal of selected topics in quantum electronics
Publisher
Institute of Electrical and Electronics Engineers
Citation
Spector, S.J. et al. “Operation and Optimization of Silicon-Diode-Based Optical Modulators.” Selected Topics in Quantum Electronics, IEEE Journal Of 16.1 (2010) : 165-172. © 2010 IEEE
Version
Final published version
Abstract
An optical modulator in silicon based on a diode structure
has been operated in both forward and reverse bias. This modulator
achieves near state-of-the-art performance in both modes,
thereby making this device ideal for comparing the two modes of
operation. In reverse bias, the device has a VπL [V subscript pi L] of 4.0 V·cm and a
bandwidth of 26 GHz. In forward bias, the device is very sensitive,
a VπL [V subscript pi L] as low as 0.0025 V·cm has been achieved, but the bandwidth
is only 100 MHz. A new geometry for a reverse-bias device
is proposed, and it is predicted to achieve a VπL [V subscript pi L] of 0.5 V·cm.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/jstqe.2009.2027817
