Resolution Limits of Electron-Beam Lithography toward the Atomic Scale
Name
STEM Lithography Manuscript-after_review-preprint.pdf
Description
Main Article
Size
1.15 MB
Format
Adobe PDF
Checksum (MD5)
c3970aadd95b2433dcc5612604f341a6
Author(s)
Zhang, Lihua
Su, Dong
Duan, Huigao
Stach, Eric A.
Berggren, Karl K.
Manfrinato, Vitor Riseti
Hobbs, Richard
Date Issued
March 2013
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Manfrinato, Vitor R., Lihua Zhang, Dong Su, Huigao Duan, Richard G. Hobbs, Eric A. Stach, and Karl K. Berggren. “Resolution Limits of Electron-Beam Lithography Toward the Atomic Scale.” Nano Lett. (March 19, 2013): 130321102652000.
Version
Author's final manuscript
Abstract
We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1021/nl304715p
