Characterization of Three-Dimensional-Integrated Active Pixel Sensor for X-Ray Detection
Name
Prigozhin-2009-Characterization of Three-Dimensional-Integrated Active Pixel Sensor for X-Ray Detection.pdf
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Author(s)
Bautz, Marshall W.
Busacker, David E.
Prigozhin, Gregory
Suntharalingam, Vyshnavi
Foster, Richard F.
Kissel, Steve E.
La Marr, Beverly J.
Soares, Antonio M.
Villasenor, Jesus Noel Samonte
Date Issued
November 2009
Publisher
IEEE transactions on electron devices
Institute of Electrical and Electronics Engineers
Citation
Prigozhin, G. et al. “Characterization of Three-Dimensional-Integrated Active Pixel Sensor for X-Ray Detection.” Electron Devices, IEEE Transactions on 56.11 (2009): 2602-2611.
© 2009, IEEE
Version
Final published version
Abstract
We have developed a back-illuminated active pixel sensor (APS) which includes an SOI readout circuit and a silicon diode detector array implemented in a separate high-resistivity wafer. Both are connected together using a per-pixel 3-D integration technique developed at Lincoln Laboratory. The device was fabricated as part of a program to develop a photon-counting APS for imaging spectroscopy in the soft X-ray (0.3-10-keV) spectral band. Here, we report single-pixel X-ray response with spectral resolution of 181-eV full-width at half-maximum at 5.9 keV. The X-ray data allow us to characterize the responsivity and input-referred noise properties of the device. We measured interpixel crosstalk and found large left-right asymmetry explained by coupling of the sense node to the source follower output. We have measured noise parameters of the SOI transistors and determined factors which limit the device performance.
MIT Department
Lincoln Laboratory
MIT Kavli Institute for Astrophysics and Space Research
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/ted.2009.2030988
