Calculating the band structure of 3C-SiC using sp[superscript 3]d[superscript 5]s* + ∆ model
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40094_2019_Article_324.pdf
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Author(s)
Onen, Murat
Turchetti, Marco
Date Issued
February 2019
Journal
Journal of Theoretical and Applied Physics
Publisher
Springer Berlin Heidelberg
Citation
Onen, Murat, and Marco Turchetti. “Calculating the Band Structure of 3C-SiC Using Sp[superscript 3]d[superscript 5]s* + ∆ Model.” Journal of Theoretical and Applied Physics 13, no. 1 (February 28, 2019): 1–6. © 2019 The Authors
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Final published version
Abstract
We report on a semiempirical tight-binding model for 3C-SiC including the effect of sp[superscript 3]d[superscript 5]s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater–Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses. Keywords: Semiempirical tight-binding, Electronic band structure, SiC
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems
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DOI of Published Version
https://doi.org/10.1007/s40094-019-0324-5
