Development of gallium nitride power transistors
Name
756037142-MIT.pdf
Description
Full printable version
Size
5.11 MB
Format
Adobe PDF
Checksum (MD5)
55d3544a95d8b264fa889e4c9126bf22
Author(s)
Piedra, Daniel, Ph. D. Massachusetts Institute of Technology
Advisor(s)
Tomás Palacios.
Date Issued
2011
Publisher
Massachusetts Institute of Technology
Abstract
GaN-based high-voltage transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. This thesis describes a new process technology for the fabrication of GaN power devices optimized for their use in efficient power distribution systems in computer micro-processors. An existing process flow was used to fabricate the baseline single-finger transistors and additional process steps were developed and optimized to fabricate multi-finger devices with total gate widths up to 12mm. These transistors offer the current and on-resistance levels required by future GaN-based power converters. Transistors with various gate widths were fabricated and characterized by DC and capacitancevoltage measurements to study how the main transistor metrics scale with gate width.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2011.
"November 2010." Cataloged from PDF version of thesis.
Includes bibliographical references (p. 78-79).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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