Optimal design of channel doping for fully depleted SOI MOSFETs
Name
35121241-MIT.pdf
Description
Full printable version
Size
3.13 MB
Format
Adobe PDF
Checksum (MD5)
8be475a65c45afecb07560ac8967eddd
Author(s)
Ouma, Dennis Okumu
Advisor(s)
Dimitri Antoniadis.
Alternative Title
Optimal design of channel doping for fully depleted silicon-on-insulator metal oxide semiconductor field effect transistors.
Date Issued
1995
Publisher
Massachusetts Institute of Technology
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
Includes bibliographical references (leaves 87-89).
Subjects
Electrical Engineering and Computer Science
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Persistent DSpace Link
