SI-based unreleased hybrid MEMS-CMOS resonators in 32nm technology
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Weinstein_Si-based unreleased.pdf
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Author(s)
Marathe, Radhika A.
Wang, Wentao
Weinstein, Dana
Date Issued
March 2012
Journal
Proceedings of the IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), 2012
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Marathe, Radhika, Wentao Wang, and Dana Weinstein. “Si-based Unreleased Hybrid MEMS-CMOS Resonators in 32nm Technology.” IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), 2012. 729–732.
Version
Author's final manuscript
Abstract
This work presents the first unreleased Silicon resonators fabricated at the transistor level of a standard CMOS process, and realized without any release steps or packaging. These unreleased bulk acoustic resonators are driven capacitively using the thin gate dielectric of the CMOS process, and actively sensed with a Field Effect Transistor (FET) incorporated into the resonant body. FET sensing using the high f[subscript T], high performance transistors in CMOS amplifies the mechanical signal before the presence of parasitics. This enables RF-MEMS resonators at orders of magnitude higher frequencies than possible with passive devices. First generation CMOS-MEMS Si resonators with Acoustic Bragg Reflectors are demonstrated at 11.1 GHz with Q~17 and a total footprint of 5μm × 3μm using IBM's 32nm SOI technology.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
https://doi.org/10.1109/MEMSYS.2012.6170289
