Large-area microwire MoSi single-photon detectors at 1550 nm wavelength
Name
2002.09088.pdf
Description
Accepted version
Size
773.91 KB
Format
Adobe PDF
Checksum (MD5)
8453abb0353b37b3a6deb3225a4a904e
Author(s)
Charaev, I
Morimoto, Y
Dane, A
Agarwal, A
Colangelo, M
Berggren, KK
Date Issued
2020
Journal
Applied Physics Letters
Publisher
AIP Publishing
Version
Author's final manuscript
Abstract
© 2020 Author(s). We demonstrate saturated internal detection efficiency at 1550 nm wavelengths for meander-shaped superconducting nanowire single-photon detectors made of 3 nm thick MoSi films with widths of 1 and 3 μm and active areas up to 400 × 400 μm2. Despite hairpin turns and a large number of squares (up to 104) in the device, the dark count rate was measured to be ∼103 cps at 99% of the switching current. This value is about two orders of magnitude lower than the results reported recently for short MoSi devices with shunt resistors. We also found that 5 nm thick MoSi detectors with the same geometry were insensitive to single near-infrared photons, which may be associated with different levels of suppression of the superconducting order parameter. However, our results obtained on 3 nm thick MoSi devices are in good agreement with predictions in the frame of a kinetic-equation approach.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1063/5.0005439
