We are experiencing minor difficulties with our submission forms, which we are working to resolve. If you have any issues while submitting items, please contact us at dspace-lib@mit.edu.

The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy

Thumbnail Image
Download
Name

19283326-MIT.pdf

Description
Full printable version
Size

9.65 MB

Format

Adobe PDF

Checksum (MD5)

4fb79229a00d08c6bf2056e895104e3a

Author(s)
Elcess, Kimberley
Advisor(s)
Clifton G. Fonstad.
Date Issued
1988
Publisher
Massachusetts Institute of Technology
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988.
On t.p. all "x̳" is subscript.
Includes bibliographical references.
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.
Persistent DSpace Link
PrivacyPermissionsAccessibilityContact us
Notify us about copyright concerns.