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  5. The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy

The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy

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Author(s)
Elcess, Kimberley
Advisor(s)
Clifton G. Fonstad.
Date Issued
1988
Publisher
Massachusetts Institute of Technology
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988.
On t.p. all "x̳" is subscript.
Includes bibliographical references.
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.
http://dspace.mit.edu/handle/1721.1/7582
Persistent DSpace Link
http://hdl.handle.net/1721.1/109624
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