GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

Yuan, Mengyang; Xie, Qingyun; Fu, Kai; Hossain, Toiyob; Niroula, John; Greer, James A.; Chowdhury, Nadim; Zhao, Yuji; Palacios, Tomas

doi:10.1109/LED.2022.3204566

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

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Author(s)

Yuan, Mengyang

•

Xie, Qingyun

•

Fu, Kai

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Hossain, Toiyob

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Niroula, John

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Greer, James A.

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Chowdhury, Nadim

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Zhao, Yuji

•

Palacios, Tomas

Date Issued

September 5, 2022

Journal

IEEE Electron Device Letters

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Citation

Yuan, Mengyang, Xie, Qingyun, Fu, Kai, Hossain, Toiyob, Niroula, John et al. 2022. "GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform." IEEE Electron Device Letters, 43 (11).

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Author's final manuscript

Subjects

Electrical and Electronic Engineering

Electronic, Optical and Magnetic Materials

MIT Department

Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science

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Persistent DSpace Link

https://hdl.handle.net/1721.1/150481

DOI of Published Version

https://doi.org/10.1109/led.2022.3204566