Optimization of out-of-plane magnetized Co/Pt multilayers with resistive buffer layers
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Beach_Optimization of out.pdf
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Author(s)
Emori, Satoru
Beach, Geoffrey Stephen
Date Issued
August 2011
Journal
Journal of Applied Physics
Publisher
American Institute of Physics
Citation
Emori, Satoru, and Geoffrey S. D. Beach. Optimization of Out-of-plane Magnetized Co/Pt Multilayers with Resistive Buffer Layers. Journal of Applied Physics 110, no. 3 (2011): 033919.© 2011 American Institute of Physics.
Version
Final published version
Abstract
Ta oxide (TaOx) is investigated as a resistive buffer layer for the growth of high-quality Co/Pt multilayers with perpendicular magnetic anisotropy (PMA). The Pt/(Co/Pt)3 films grown on TaOx buffer layers exhibit stronger PMA than those grown on Pt buffer layers, and are of comparable quality to films grown on metallic Ta. The optimized multilayers with TaOx buffer layers remain out-of-plane magnetized for Co layer thicknesses up to 10 Å without introducing a metallic current-shunting path, making these films attractive for spintronic devices using spin-polarized current.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.3622613
