Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN
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2109.04597.pdf
Description
Submitted version
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1 MB
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Checksum (MD5)
cad44f322c70c0b75406bbf4660e33c8
Author(s)
Gong, Jiarui
Lu, Kuangye
Kim, Jisoo
Ng, TienKhee
Kim, Donghyeok
Zhou, Jie
Liu, Dong
Kim, Jeehwan
Ooi, Boon S
Ma, Zhenqiang
Date Issued
January 1, 2022
Journal
Japanese Journal of Applied Physics
Publisher
IOP Publishing
Citation
Gong, Jiarui, Lu, Kuangye, Kim, Jisoo, Ng, TienKhee, Kim, Donghyeok et al. 2022. "Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN." Japanese Journal of Applied Physics, 61 (1).
Version
Original manuscript
Abstract
The recently demonstrated approach of grafting n-type GaN with p-type Si or GaAs, by employing ultrathin Al2O3 at the interface, has shown the feasibility to overcome the poor p-type doping challenge of GaN. However, the surface band-bending of GaN that could be influenced by the Al2O3 has been unknown. In this work, the band-bending of c-plane, Ga-face GaN with ultrathin Al2O3 deposition at the surface of GaN was studied using X-ray photoelectron spectroscopy. The study shows that the Al2O3 can help suppress the upward band-bending of the c-plane, Ga-face GaN with a monotonic reduction trend from 0.48 eV down to 0.12 eV as the number of Al2O3 deposition cycles increases from 0 to 20. The study further shows that the band-bending can be mostly recovered after removing the Al2O3 layer, concurring that the introduction of ultrathin Al2O3 is the main reason for the surface band-bending modulation.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.35848/1347-4065/ac3d45
