Optimal MOSFET design for low temperature operation

Name

RLE-TR-653-49201558.pdf

Size

7.98 MB

Format

Adobe PDF

Checksum (MD5)

b4dd3dd45db7f329047baf9cc59f4bd6

Alternative Title

Optimal metal oxide semiconductor field-effect transistors design for low temperature operation

Date Issued

2001

Series/Report no.

Technical report (Massachusetts Institute of Technology. Research Laboratory of Electronics) ; 653.

Description

Supervised by Dimitri A. Antoniadis and Henry I. Smith.

Also issued as Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.

Includes bibliographical references.

MIT Department

Massachusetts Institute of Technology. Research Laboratory of Electronics

Persistent DSpace Link