Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes
Name
PhysRevApplied.6.034016.pdf
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695.96 KB
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Adobe PDF
Checksum (MD5)
856378bc39737e0595f24c3ac08742c5
Author(s)
Schoofs, Frank
Ramanathan, Shriram
Jaramillo, Rafael
Youssef, Amanda
Akey, Austin J
Buonassisi, Anthony
Alternative Title
Using Atom-Probe Tomography to Understand ZnO∶Al=SiO2=Si Schottky Diodes
Date Issued
September 2016
Journal
Physical Review Applied
Publisher
American Physical Society
Citation
Jaramillo, R. et al. “Using Atom-Probe Tomography to Understand Zn O ∶ Al / Si O[subscript 2] / Si Schottky Diodes.” Physical Review Applied 6.3 (2016): n. pag. CrossRef. Web. 27 Dec. 2016. © 2016 American Physical Society
Version
Final published version
Abstract
We use electronic transport and atom-probe tomography to study ZnO∶Al/SiO[subscript 2]/Si Schottky diodes on lightly doped n- and p-type Si. We vary the carrier concentration in the ZnO∶Al films by 2 orders of magnitude, but the Schottky barrier height remains nearly constant. Atom-probe tomography shows that Al segregates to the interface, so that the ZnO∶Al at the junction is likely to be metallic even when the bulk of the ZnO∶Al film is semiconducting. We hypothesize that the observed Fermi-level pinning is connected to the insulator-metal transition in doped ZnO. This implies that tuning the band alignment at oxide/Si interfaces may be achieved by controlling the transition between localized and extended states in the oxide, thereby changing the orbital hybridization across the interface.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Mechanical Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/PhysRevApplied.6.034016
