Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor
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Antoniadis_Engineering the.pdf
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Author(s)
Agarwal, Sapan
Teherani, James T.
Hoyt, Judy L.
Antoniadis, Dimitri A.
Yablonovitch, Eli
Date Issued
April 2014
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Agarwal, Sapan, James T. Teherani, Judy L. Hoyt, Dimitri A. Antoniadis, and Eli Yablonovitch. “Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor.” IEEE Transactions on Electron Devices 61, no. 5 (May 2014): 1599–1606.
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Author's final manuscript
Abstract
The electron-hole (EH) bilayer tunneling field-effect transistor promises to eliminate heavy-doping band tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus ON-state conductance to find the optimal device design. Once the EH bilayer is optimized for a given ON-state conductance, Si, Ge, and InAs all have similar gate efficiency, around 40%-50%. Unlike Si and Ge, only the InAs case allows a manageable work function difference for EH bilayer transistor operation.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1109/TED.2014.2312939
