Modeling frequency response of 65 nm CMOS RF power devices
Name
del Alamo_Modeling frequency.pdf
Size
223.44 KB
Format
Adobe PDF
Checksum (MD5)
a2fb37f0d3d2cfe7d606224c1a5b5434
Author(s)
Gogineni, Usha
del Alamo, Jesus A.
Putnam, Christopher
Greenberg, David
Date Issued
November 2010
Citation
Gogineni, Usha, et al. “Modeling frequency response of 65 nm CMOS RF power devices.”
Version
Original manuscript
Abstract
This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (f[subscript T]) and maximum oscillation frequency (f[subscript max]) decrease with increasing device width. Small-signal equivalent circuit extractions reveal that the main reason for the degradation in f[subscript T] and f[subscript max] is the presence of non-scalable parasitic resistances in the gate and drain of wide devices. Simplified expressions for f[subscript T] and f[subscript max] that include these parasitic effects have been derived and shown to be very accurate.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Attribution-Noncommercial-Share Alike 3.0 Unported
Persistent DSpace Link
