Significant reduction in semiconductor interface resistance via interfacial atomic mixing
Name
PhysRevB.105.195306.pdf
Size
2.56 MB
Format
Adobe PDF
Checksum (MD5)
79d757c94060e6b0fa4c6ec7763baf9c
Author(s)
Song, Qichen
Zhou, Jiawei
Chen, Gang
Date Issued
May 11, 2022
Journal
Physical Review B
Publisher
American Physical Society (APS)
Citation
Song, Qichen, Zhou, Jiawei and Chen, Gang. 2022. "Significant reduction in semiconductor interface resistance via interfacial atomic mixing." Physical Review B, 105 (19).
Version
Final published version
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
10.1103/physrevb.105.195306
