Vertical gallium nitride fin transistors for RF applications
Name
1202001153-MIT.pdf
Size
33.89 MB
Format
Adobe PDF
Checksum (MD5)
f6b784603a5af524c890b292e8c713d3
Author(s)
Perozek, Joshua Andrew.
Advisor(s)
Tomás Palacios.
Date Issued
2020
Publisher
Massachusetts Institute of Technology
Abstract
This thesis presents the development, fabrication, and characterization of the first vertical gallium nitride fin transistors for radio frequency applications. The basic device design is adapted from vertical fin power transistors with modifications made to improve frequency performance, system integration, and uniformity. Specifically, a new, self-aligned gate process allows for dramatic scaling of gate lengths; a highly uniform planarization process improves device yield and reliability; and layout adjustments reduce parasitics and allow for on-wafer, high-frequency testing of vertical devices. These advancements are a promising step in enabling the next generation of radio frequency electronics powered by gallium nitride.
Description
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, February, 2020
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references.
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.
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