Electronegative metal dopants improve switching variability in Al2 O3 resistive switching devices
Name
PhysRevMaterials.6.105002.pdf
Description
Published version
Size
2.79 MB
Format
Adobe PDF
Checksum (MD5)
c895e5039ab1750cd4513f8e433b89ed
Author(s)
Tan, Zheng Jie
Somjit, Vrindaa
Toparli, Cigdem
Yildiz, Bilge
Fang, Nicholas
Date Issued
2022
Journal
Physical Review Materials
Publisher
American Physical Society (APS)
Citation
Tan, Zheng Jie, Somjit, Vrindaa, Toparli, Cigdem, Yildiz, Bilge and Fang, Nicholas. 2022. "Electronegative metal dopants improve switching variability in Al2 O3 resistive switching devices." Physical Review Materials, 6 (10).
Version
Final published version
MIT Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/PHYSREVMATERIALS.6.105002
