Photo-induced trimming of chalcogenide-assisted silicon photonic circuits
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Kimerling_Photo-induced trimming.pdf
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Author(s)
Melloni, Andrea
Grillanda, Stefano
Canciamilla, Antonio
Ferrari, Carlo
Morichetti, Francesco
Strain, Michael
Sorel, Marc
Singh, Vivek
Agarwal, Anuradha Murthy
Kimerling, Lionel C.
Date Issued
February 2012
Journal
Proceedings of SPIE--the International Society for Optical Engineering
Publisher
SPIE
Citation
Melloni, Andrea, Stefano Grillanda, Antonio Canciamilla, Carlo Ferrari, Francesco Morichetti, Michael Strain, Marc Sorel, Vivek Singh, Anu Agarwal, and Lionel C. Kimerling. “Photo-induced trimming of chalcogenide-assisted silicon photonic circuits.” In Silicon Photonics VII, edited by Joel Kubby and Graham T. Reed, 82660A-82660A-8. SPIE - International Society for Optical Engineering, 2012. SPIE © 2012
Version
Final published version
Abstract
We present an innovative and efficient technique for post-fabrication trimming of silicon photonic integrated circuits (PICs). Our approach exploits the high photosensitivity of chalcogenide glasses (ChGs) to induce local and permanent modifications of the optical properties and spectral responses of ChG-assisted silicon devices. We experimentally demonstrate the potential of this technique on ring resonator filters realized on a silicon-on-insulator platform, for which post-fabrication treatments enable to counteract the strong sensitivity to technological tolerances. Photosensitive ChGassisted silicon waveguides were realized by deposition of a As[subscript 2]S[subscript 3] chalcogenide layer on top of conventional silicon channel waveguides. A resonant wavelength shift of 6.7 nm was achieved, largely exceeding the random resonance spread due to fabrication tolerances. Neither the ChG layer deposition, nor the trimming process introduces appreciable additional losses with respect to the bare silicon core waveguide. Performances of the trimming technique, such as speed and saturation effects, as well as nonlinear behavior and infrared writing issues are investigated and experimentally characterized.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1117/12.908521
