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Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor
Name
76600L.pdf
Description
Published version
Size
540.59 KB
Format
Adobe PDF
Checksum (MD5)
d7e722c61c61f87f19ca1a75285f952b
Author(s)
Sood, Ashok K.
Richwine, Robert A.
Puri, Yash R.
DiLello, Nicole
Hoyt, Judy L.
Akinwande, Tayo I.
Dhar, Nibir
Horn, Stuart
Balcerak, Raymond S.
Bramhall, Thomas G.
Date Issued
April 23, 2010
Publisher
SPIE
Citation
Sood, Ashok K., Richwine, Robert A., Puri, Yash R., DiLello, Nicole, Hoyt, Judy L. et al. 2010. "Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor."
Version
Final published version
Abstract
SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with Si-MEMS Bolometers. © 2010 Copyright SPIE - The International Society for Optical Engineering.
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
10.1117/12.852682
