Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications
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Author(s)
Kan, Eric Win Hong
Leoy, C.C.
Choi, Wee Kiong
Chim, Wai Kin
Antoniadis, Dimitri A.
Fitzgerald, Eugene A.
Date Issued
January 2003
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing SiO₂ forming a Ge-rich polycrystalline layer. As for wet oxidation, Ge was incorporated into the oxide, forming a layer of mixed oxide, SixGe₁â‚‹xOy. Formation of nanocrystalline Ge was observed when the layer of SixGe₁â‚‹xOy was annealed in a N₂ ambient. We have fabricated a metal-insulator-semiconductor structure with nanocrystalline Ge embedded within the insulator layer to study its feasibility as a memory device.
Subjects
germanium nanocrystal
silicon-germanium
oxidation
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