Waveguide-integrated mid-infrared photodetection using graphene on a scalable chalcogenide glass platform
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Author(s) • • • • • • • • •
Goldstein, Jordan
Lin, Hongtao
Deckoff-Jones, Skylar
Hempel, Marek
Lu, Ang-Yu
Richardson, Kathleen A
Palacios, Tomás
Kong, Jing
Hu, Juejun
Englund, Dirk
Date Issued
December 2022
Journal
Nature Communications
Publisher
Springer Science and Business Media LLC
Citation
Goldstein, Jordan, Lin, Hongtao, Deckoff-Jones, Skylar, Hempel, Marek, Lu, Ang-Yu et al. 2022. "Waveguide-integrated mid-infrared photodetection using graphene on a scalable chalcogenide glass platform." Nature Communications, 13 (1).
Version
Final published version
Abstract
The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices
represents a critical challenge for distributed sensing with applications from gas leak
detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and
detectors based on semiconductors such as PbTe, black phosphorus and tellurene. However,
material bandgaps and reliance on SiO2 substrates limit operation to wavelengths λ ≲ 4 μm.
Here we overcome these challenges with a chalcogenide glass-on-CaF2 PIC architecture
incorporating split-gate photothermoelectric graphene photodetectors. Our design extends
operation to λ = 5.2 μm with a Johnson noise-limited noise-equivalent power of 1.1 nW/Hz1/2,
no fall-off in photoresponse up to f = 1 MHz, and a predicted 3-dB bandwidth of f3dB > 1 GHz.
This mid-IR PIC platform readily extends to longer wavelengths and opens the door to
applications from distributed gas sensing and portable dual comb spectroscopy to weatherresilient free space optical communications.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1038/s41467-022-31607-7