Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation
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Chung-2009-Gate-Recessed InAlN_.pdf
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Author(s)
Guo, Shiping
Tirado, Jose M.
Gao, Xiang
Saadat, Omair Irfan
Chung, Jae W.
Palacios, Tomas
Alternative Title
Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al2O3 Passivation
Date Issued
August 2009
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chung, J.W. et al. “Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation.” Electron Device Letters, IEEE 30.9 (2009): 904-906. © 2009 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
We studied submicrometer (L[subscript G] = 0.15-0.25 à ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al[subscript 2]O[subscript 3] passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of I[subscript DS,max] = 1.5 A/mm and a record peak extrinsic transconductance of g[subscript m,ext] = 675 mS/mm. The thin Al[subscript 2]O[subscript 3] passivation improved the sheet resistance and the transconductance of these devices by 15% and 25%, respectively, at the same time that it effectively suppressed current collapse.
Subjects
Al2O3 passivation
InAlN
gate recess
high transconductance
high-electron mobility transistor (HEMT)
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
http://dx.doi.org/10.1109/led.2009.2026718
